Optical and magneto-optical determination of the EL2 concentrations in semi-insulating GaAs
- 1 March 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (3) , 170-174
- https://doi.org/10.1088/0268-1242/6/3/005
Abstract
A comparison is presented of two different optical methods to determine the concentrations of both charge states of EL2 defects. It is shown that a discrepancy exists for published optical cross sections and that optical absorption measurements are not suitable to determine the concentrations of the ionized EL2 defects with sufficient precision in semi-insulating GaAs wafers.Keywords
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