Abstract
High voltage measurement based on the electro‐optical effect of ADP crystal plate is described. When voltage is applied across a uniaxial ADP crystal, the crystal becomes biaxial. For the field EZ in the Z direction across a Z‐cut crystal plate, axes of the index ellipsoid are rotated by −45° in the XY plane independent of EZ and birefringence along the Z axis becomes proportional to EZ, then the retardation of light in the Z direction becomes proportional to applied voltage across the crystal plate. Therefore, the applied voltage can be obtained by photoelectric measurement of the optical retardation.

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