Hall Effect and Conductivity of InSb

Hall coefficient and conductivity of single-crystal InSb have been measured from 1.3°K to 700°K. Impurity band conduction and an acceptor ionization energy of 7×${10}^{-3\mathrm{}}$ ev have been observed in $p$-type InSb at low temperature. Variation of $R_H$ with $H$ indicates a complicated valence band structure. Effective masses of $0.015m$ for electrons and approximately $0.17m$ for holes are consistent with mobility and low temperature Hall effect data. Lattice scattering mobilities are proportional to $T^{-1.68\mathrm{}}$ for electrons and approximately $T^{-2.1\mathrm{}}$ for holes. The intrinsic carrier concentration product is given by $np=3.6\mathrm{}\times {10}^{29}{T}^3\exp (-\frac{0.26}{\mathrm{kT}})$ above 200°K. $E_g$ at 0°K is between 0.26 and 0.29 ev.