Thermal stability of engineered Schottky barriers in Al/Si/GaAs(001) diodes
- 23 September 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (13) , 1927-1929
- https://doi.org/10.1063/1.117624
Abstract
Schottky barriers as high (low) as 1.0–1.1 eV (0.2–0.3 eV) obtained in Al/n‐GaAs(001) diodes by fabricating Si bilayers at the interface under an excess cation (anion) flux were subjected to sequential annealing cycles in the 100–450 °C temperature range. X‐ray photoemission and current–voltage studies indicate a higher stability for high‐barrier diodes, which retain 90% of the Si‐induced interface dipole after a 450 °C anneal, as compared to only 32% for the low‐barrier devices. Qualitatively different microscopic degradation mechanisms were identified in the two cases.Keywords
This publication has 0 references indexed in Scilit: