Lattice Location of Deuterium Interacting with the Boron Acceptor in Silicon
- 25 January 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 60 (4) , 321-324
- https://doi.org/10.1103/physrevlett.60.321
Abstract
The lattice location of deuterium diffused into boron-doped silicon has been studied by means of channeling. After removal of a 0.2-μm-thick surface layer, it is found that 87% of the deuterium atoms occupy near-bond-center sites, whereas the remaining 13% are located close to tetrahedral sites. It is argued that the near-bond-center sites are related to boron-deuterium pairs, and the structure of these is discussed.Keywords
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