0.25/spl mu/m Contact Hole Filling by Al-Ge Reflow Sputtering
- 1 January 1991
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Feature size and temperature sensitive process windows for excimer laser planarization of aluminumJournal of Vacuum Science & Technology B, 1990
- The properties of aluminum thin films sputter deposited at elevated temperaturesJournal of Vacuum Science & Technology A, 1988
- Planarization of aluminum alloy film during high rate sputteringThin Solid Films, 1987