28 GHz-Band GaAs Monolithic Amplifiers

1 October 1984

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 193-196
https://doi.org/10.1109/gaas.1984.10401316

Abstract

A medium power 28GHz-band GaAs monolithic amplifiers have been developed for use in Ka-Band microwave links.FET's 0.4um gate patterns, which contain ten 125um-wide fingers, are formed by variable-shaped electron-beam direct writing with a PMMA film on a spin coated SiO 2 / a buffer resist layer. The amplifier provides a 3.7dB linear gain and a 21.1dBm output power, when the gain is ldB compressed at 28GHz. The frequency band, where the linear gain is more than 3dB, is from 27.7 to 28.9GHz. Chip size is 1×1.3×0.15 ^t mm.

Keywords

LOGIC GATES
FIELD EFFECT TRANSISTORS
GAIN
GALLIUM ARSENIDE
ELECTRODES
RESISTS
POWER GENERATION

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