Role of virtual gap states and defects in metal-semiconductor contacts
- 23 March 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (12) , 1260-1263
- https://doi.org/10.1103/physrevlett.58.1260
Abstract
Chemical trends of barrier heights reported for metal- and silicide-silicon contacts are analyzed. The data are easily explained when both virtual gap states of the complex band structure of the semiconductor and electronic levels of defects created in the semiconductor close to the interface during its formation are considered. The virtual gap states determine the barrier heights when either the defect density is low or the defects are completely charged or all neutral.Keywords
This publication has 24 references indexed in Scilit:
- Theory of semiconductor heterojunctions: The role of quantum dipolesPhysical Review B, 1984
- Chemical trends in metal-semiconductor barrier heightsPhysical Review B, 1978
- The metal-semiconductor interface: Si (111) and zincblende (110) junctionsJournal of Physics C: Solid State Physics, 1977
- Photoemission study of the formation of Schottky barriersApplied Physics Letters, 1975
- FUNDAMENTAL TRANSITION IN THE ELECTRONIC NATURE OF SOLIDSPhysical Review Letters, 1969
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965
- Theory of Surface StatesPhysical Review B, 1965
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947
- Halbleitertheorie der SperrschichtThe Science of Nature, 1938
- Note on the contact between a metal and an insulator or semi-conductorMathematical Proceedings of the Cambridge Philosophical Society, 1938