The role of oxygen in optical activation of Er implanted in Si
- 15 July 1995
- journal article
- Published by Elsevier in Journal of Alloys and Compounds
- Vol. 225 (1-2) , 555-558
- https://doi.org/10.1016/0925-8388(94)07088-1
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Room-temperature electroluminescence from Er-doped crystalline SiApplied Physics Letters, 1994
- Optical activation and excitation mechanisms of Er implanted in SiPhysical Review B, 1993
- The Physics and Application of Si:Er for Light Emitting DiodesMaterials Science Forum, 1993
- Incorporation of high concentrations of erbium in crystal siliconApplied Physics Letters, 1993
- Dopant Enhancement of the 1.54 µm Emission of Erbium Implanted in SiliconMaterials Science Forum, 1992
- The electrical and defect properties of erbium-implanted siliconJournal of Applied Physics, 1991
- Impurity enhancement of the 1.54-μm Er3+ luminescence in siliconJournal of Applied Physics, 1991
- Characteristics of rare-earth element erbium implanted in siliconApplied Physics Letters, 1989
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985
- 1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconApplied Physics Letters, 1983