Resistivity reduction and chemical stabilization of organometallic chemical vapor deposited titanium nitride by nitrogen rf plasma

12 February 1996

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 68 (7) , 1015-1016
https://doi.org/10.1063/1.116213

Abstract

In situ, nitrogen rf plasma treatment of organometallic chemical vapor deposited (OMCVD) TiN, synthesized by thermal decomposition of tetrakis(dimethylamido) titanium, yielded films with low resistivity and enhanced chemical stability. A sequential OMCVD-plasma treatment process allowed deposition of films with bulk resistivity as low as 400 μΩ cm. The nitridation resulted in reduction of the carbon concentration in the films, and crystallization of TiN. The composition and electrical properties of the nitridized films were found to be stable upon air exposure. The films possess excellent step coverage (≳70% in 0.35 μm device structures with aspect ratio ∼3) and low defect density (∼0.06 cm−2 for defect size ≥0.2 μm).

Keywords

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