Low polarisation sensitivity electroabsorption modulators for 160 Gbit/s networks
- 20 November 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (24) , 2068-2070
- https://doi.org/10.1049/el:19971393
Abstract
Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160 Gbit/s OTDM systems is experimentally assessed.Keywords
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- 40 Gbit/s transmission over 202 km of standard fibreusing midspan spectral inversionElectronics Letters, 1995