Magneto-optical studies on excitons bound to deep donors with strong axial symmetry in gallium arsenide
- 1 January 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 18 (9-10) , 1267-1270
- https://doi.org/10.1016/0038-1098(76)90955-8
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Vapor-phase epitaxial growth of GaAs in a nitrogen atmosphereJournal of Applied Physics, 1974
- Optical Properties of Excitons Bound to Copper-Complex Centers in Gallium ArsenidePhysical Review B, 1973
- Zeeman spectra of the principal bound exciton in Sn-doped gallium arsenideSolid State Communications, 1972
- Bound exciton luminescence in epitaxial Sn-doped gallium-arsenideJournal of Luminescence, 1970
- Stress Effects on Excitons Bound to Axially Symmetric Defects in SemiconductorsPhysical Review B, 1970
- New Red Pair Luminescence from GaPPhysical Review B, 1968
- First order Raman effect in III–V compoundsSolid State Communications, 1966
- Space group selection rules and infrared active phonon processes in GaAsPhysics Letters, 1964