Self‐Consistent Tight‐Binding Investigation of Chemical Trends for Native Defects in III–V Semiconductors
- 1 June 1987
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 141 (2) , 541-557
- https://doi.org/10.1002/pssb.2221410222
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Electronic structure of neutral and charged point defects. A charge self‐consistent empirical tight‐binding studyPhysica Status Solidi (b), 1986
- Charge Self‐Consistent Tight‐Binding Parameters. Application to III‐V Compound SemiconductorsPhysica Status Solidi (b), 1985
- Self-consistent electronic structure of vacancies in semiconductorsJournal of Crystal Growth, 1985
- Theory of charge-state splittings of deep levelsPhysical Review B, 1985
- Electronic structure and identification of deep defects in GaPPhysical Review B, 1984
- Tight-binding calculation of orbital relaxations and hopping integral modifications around vacancies and antisite defects in GaAsJournal de Physique, 1983
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Proof thatin density-functional theoryPhysical Review B, 1978
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- Roothaan-Hartree-Fock atomic wavefunctionsAtomic Data and Nuclear Data Tables, 1974