Transit modes of InP transferred-electron devices

9 January 1975

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 11 (1) , 13-14
https://doi.org/10.1049/el:19750010

Abstract

The characteristics of accumulation transit oscillations in InP n⁺-n-n⁺ transferred-electron oscillators and the dependence of device efficiency on the injection properties of the cathode contact have been analysed by computer simulation.

Keywords

COMPUTER SIMULATION
ACCUMULATION TRANSIT OSCILLATIONS
INP TRANSFERRED ELECTRON DEVICES
TRANSIT MODES
INJECTION PROPERTIES
CATHODE CONTACT

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