Reactive sputter etching and reactive ion milling—selectivity, dimensional control, and reduction of MOS–interface degradation

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Abstract
Recent results on the application of reactive etching techniques in semiconductor device technology are reported. The two systems used are a rf diode system and a dc ion milling system both fed with Ar and various Freon-type gases. The two processes are compared with regard to selectivity, dimensional control and edge profiles. Further results show that, if CF4 and CHF3 instead of Ar are applied in the etching processes, the redeposition of sputtered materials as well as the degradation of the MOS–interface properties can be largely reduced. From our experiments we conclude that neither reactive sputter etching nor dc reactive ion milling can be favored, their potentials however exceed tunnel reactor plasma etching as well as Ar sputter etching and Ar ion milling.

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