Device characteristics of (AlGa)As multiquantum-well heterostructure lasers grown by molecular beam epitaxy
- 15 February 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (4) , 204-207
- https://doi.org/10.1063/1.92321
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Laser oscillation with optically pumped very thin GaAs-AlxGa1−xAs multilayer structures and conventional double heterostructuresJournal of Applied Physics, 1976
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