Preparation of BaTiO3 Films by ICP Flash Evaporation

1 January 1993

journal article
Published by Ceramic Society of Japan in Journal of the Ceramic Society of Japan

Vol. 101 (1173) , 564-568
https://doi.org/10.2109/jcersj.101.564

Abstract

ICP (inductively coupled plasma) flash evaporation, which was a recently developed process for film growth, was applied to the preparation of BaTiO₃ films. Powders of BaTiO₃ (ave. dia. -0.1μm) were evaporated in thermal Ar+O₂ plasma and deposited onto substrates under 20-60kPa. Uniform and translucent films could be obtained on polished fused silica plates. They were consisted of cubic BaTiO₃ and the lattice parameter ranged between 0.400 and 0.401nm. The compositions of the films shown by Ba/Ti atomic ratio were 0.98-1.02. The effect of deposition. conditions on the deposition manner were investigated. The results suggested that the mechanism of film growth in ICP flash evaporation was characterized by a masstransport limited process under very high supersaturation. Epitaxial growth was also observed for the films deposited on (100) MgO single crystals.

Keywords

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