Electrical properties of dislocation lines in silicon
- 1 July 1982
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 46 (1) , 85-88
- https://doi.org/10.1080/13642818208246425
Abstract
Contrary to currently held views, we show that the electrical levels reported in spectroscopic studies on line defects in silicon cannot be directly associated with dangling-bond bands of reconstructed or unreconstructed dislocations. We make general predictions concerning the nature of these levels.Keywords
This publication has 3 references indexed in Scilit:
- The nature of dangling bonds at line defects in covalent semiconductorsJournal of Physics C: Solid State Physics, 1981
- Energy band associated with dangling bonds in siliconPhysical Review B, 1980
- Self-consistent pseudopotential calculations for Si (111) surfaces: Unreconstructed (1×1) and reconstructed (2×1) model structuresPhysical Review B, 1975