Role of surface band bending in residual conductivity formation in epitaxial GaAs films
- 16 August 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 30 (2) , 755-763
- https://doi.org/10.1002/pssa.2210300236
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Low-temperature field-effect in GaAs with impurity bandPhysica Status Solidi (a), 1973
- The 0.94, 1.01, and 1.29 eV luminescence bands in laser-excited n-GaAsPhysica Status Solidi (a), 1973
- Anisotropy of the magnetoresistance in GaAs monocrystalline filmsPhysica Status Solidi (a), 1972
- Nonequilibrium Field Effect on Si in the Region of High DepletionPhysica Status Solidi (b), 1965