Low-threshold and high temperature single-longitudinal-mode operation of 1.55 μm-band DFB-DC-PBH LDs

5 July 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (14) , 595-596
https://doi.org/10.1049/el:19840410

Abstract

1.55 μm-band distributed-feedback laser diodes with double-channel planar buried heterostructure (DFB-DC-PBH LDs) have been developed. As well as low threshold current, 19 mA at room temperature, stable CW single-longitudinal-mode operation up to the high power level of 23 mW and the high temperature of 108°C has been obtained.

Keywords

PBH TYPE
SEMICONDUCTOR LASERS
INP/INGAASP
OPTICAL COMMUNICATION EQUIPMENT
1.55 MICRON BAND
STABLE CW OPERATION
OPTICAL WAVEGUIDES
DFB LASERS
SINGLE-LONGITUDINAL-MODE OPERATION
HIGH TEMPERATURE OPERATION
III-V SEMICONDUCTORS
LOW THRESHOLD CURRENT
DISTRIBUTED-FEEDBACK LASER DIODES
DOUBLE- CHANNEL PLANAR BURIED HETEROSTRUCTURE
108°C