MICROWAVE PERMITTIVITY OF THE GaAs LATTICE AT TEMPERATURES BETWEEN 100°K AND 600°K
- 15 December 1968
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (12) , 404
- https://doi.org/10.1063/1.1652491
Abstract
An earlier letter reported microwave (70.2 GHz) measurements of the relative permittivity εr of high-resistivity GaAs in the temperature range between 100° and 300°K. This letter extends the measurements to 600°K. Over the entire temperature range 100° < T < 600°K, the permittivity is observed to fit the expression εr(T) = εr(0){1 + αT}, where εr(0) = 12.79 ± 0.10 and α = 1.0 × 10−4 deg−1.Keywords
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