Electrical characterization of plasma-deposited hydrogenated amorphous carbon films
- 1 July 1991
- journal article
- Published by Elsevier in Materials Science and Engineering: A
- Vol. 139, 334-388
- https://doi.org/10.1016/0921-5093(91)90637-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Clustering and gap states in amorphous carbonPhilosophical Magazine Letters, 1988
- Electronic and atomic structure of amorphous carbonPhysical Review B, 1987
- Properties of hydrogenated amorphous carbon films and the effects of dopingPhilosophical Magazine Part B, 1982
- Thermopower of doped semiconducting hydrogenated amorphous carbon filmsSolid State Communications, 1982
- Chemical modification of the electrical properties of hydrogenated amorphous carbon filmsSolid State Communications, 1980
- Coulomb gap in disordered systemsJournal of Physics C: Solid State Physics, 1976
- On the observation of variable range hoppingPhysica Status Solidi (a), 1976
- Coulomb gap and low temperature conductivity of disordered systemsJournal of Physics C: Solid State Physics, 1975
- Conduction in glasses containing transition metal ionsJournal of Non-Crystalline Solids, 1968