Deep level transient spectroscopy signature analysis of D X centers in AlGaAs and GaAsP

29 December 1986

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 49 (26) , 1790-1792
https://doi.org/10.1063/1.97192

Abstract

The characterization of deep levels generated by donor dopants (DX centers) requires reliable deep level transient spectroscopy (DLTS) data. Because in AlGaAs and GaAsP the electron thermal emission from DX centers produces strong nonexponential capacitance transients, blind DLTS analysis may lead to erroneous trap parameter determinations. In this work the DLTS sampling conditions to be used for proper DX center characterization are examined. It is concluded that, only under constant t_b/t_a windowing ratios, self‐consistent trap parameters are obtained.

Keywords

This publication has 5 references indexed in Scilit:

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Applied Physics Letters, 1986
On the carrier emission from donor-related centres in GaAs1-xPx and AlxGa1-xAs
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