Characterisation of semiconducting materials and devices by EBIC and CL techniques

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Abstract
Electron beam induced current (EBIC) and cathodoluminescence (CL) investigations in the SEM (or STEM) enable the evaluation of electronic material properties on a micron scale, which makes them extremely useful analytical tools in semiconductor research. The theoretical basis of quantitative signal analysis is treated for both techniques and recent results on the CL contrast of dislocations are reported. The experimental requirements are briefly discussed and a survey is given on the types of information to be obtained. The significance of such information for a detailed understanding of device-related problems is demonstrated by illustrative examples of application. Advances in extending the CL technique to the wavelength region above 1.1μm, as required for the study of low bandgap semiconductors or deep impurity levels, are reported.

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