GaAs power MEWFETs with a simplified recess structure

1 January 1978

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. XXI, 118-119
https://doi.org/10.1109/isscc.1978.1155865

Abstract

A simplified recess structure to reduce the drain breakdown voltage of GaAs power FETs will be covered. The structure, with an internal matching network has delivered an output power of 7W at 5.6GHz.

Keywords

GALLIUM ARSENIDE
MICROWAVE DEVICES
FABRICATION
MESFETS
FETS
EPITAXIAL LAYERS
PRODUCTION
ELECTRON DEVICES
BREAKDOWN VOLTAGE
LABORATORIES

This publication has 3 references indexed in Scilit:

Improved noise performance of GaAs MESFET's with selectively ion-implanted n⁺source regions
IEEE Transactions on Electron Devices, 1977
Internally matched microwave broadband linear power FET
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1977
Power GaAs MESFET with a High Drain-Source Breakdown Voltage
IEEE Transactions on Microwave Theory and Techniques, 1976