Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates
- 1 November 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (18) , 2752-2754
- https://doi.org/10.1063/1.125138
Abstract
We report the ability to arrange self-organized Ge islands on patterned Si (001) substrates. Selective epitaxial growth of Si is carried out with gas-source molecular beam epitaxy to form Si mesas followed by subsequent Ge growth. Self-aligned and regularly spaced Ge islands are formed on the 〈110〉-oriented ridges of the Si stripe mesas. A mono-modal size distribution of the islands has been observed on the ridges. Using preferential nucleation sites allows us to place Ge islands at predetermined positions. The controlled arrangement of self-organized nanostructures offers the potential applications of island arrays for the implementation in nanoelectronics and quantum computation.Keywords
This publication has 23 references indexed in Scilit:
- Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to DomesScience, 1998
- Size distribution of Ge islands grown on Si(001)Applied Physics Letters, 1997
- Direct formation of vertically coupled quantum dots in Stranski-Krastanow growthPhysical Review B, 1996
- Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer filmsPhysical Review B, 1996
- Spontaneous Ordering of Arrays of Coherent Strained IslandsPhysical Review Letters, 1995
- Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)Physical Review Letters, 1995
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994
- Clustering on surfacesSurface Science Reports, 1992
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Growth mechanism and clustering phenomena: The Ge-on-Si systemPhysical Review B, 1989