Visible photoluminescence at room temperature from microcrystalline silicon precipitates in SiO2 formed by ion implantation
- 1 March 1995
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 96 (1-2) , 387-391
- https://doi.org/10.1016/0168-583x(94)00525-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Light emission from crystalline silicon and amorphous silicon oxide (SiOx) nanoparticlesJournal of Electronic Materials, 1994
- Quantum confinement in Si nanocrystalsPhysical Review B, 1993
- Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materialsPhysical Review B, 1992
- First-principles calculations of the electronic properties of silicon quantum wiresPhysical Review Letters, 1992
- Ion beam synthesis of epitaxial silicides: fabrication, characterization and applicationsMaterials Science Reports, 1992
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Preparation and Properties of Si Microcrystals Embedded in SiO2 Glass FilmsJapanese Journal of Applied Physics, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Buried oxide formation in Si by high-dose implantation of oxygenApplied Surface Science, 1987
- Diffusion du silicium dans la silice amorpheActa Metallurgica, 1980