Properties of schottky barrier diodes and ohmic contacts on znte single crystal
- 1 January 1978
- journal article
- research article
- Published by Wiley in Electrical Engineering in Japan
- Vol. 98 (6) , 1-9
- https://doi.org/10.1002/eej.4390980601
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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- The phase diagram of zinc tellurideSolid State Communications, 1964
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- Injection Luminescence in ZnTe DiodesJapanese Journal of Applied Physics, 1964
- Carrier Mobility and Shallow Impurity States in ZnSe and ZnTePhysical Review B, 1963
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963
- Work Functions of the ElementsJournal of Applied Physics, 1950