Transistor nonlinearity-dependence on emitter bias current in P-N-P Alloy junction
- 1 March 1958
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Audio
- Vol. AU-6 (2) , 41-44
- https://doi.org/10.1109/tau.1958.1166128
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Emitter Efficiency of Junction TransistorJournal of the Physics Society Japan, 1955
- Extension of the Theory of the Junction TransistorPhysical Review B, 1954
- On the Variation of Junction-Transistor Current-Amplification Factor with Emitter CurrentProceedings of the IRE, 1954