Laser irradiation during MBE growth of ZnSxSe1−x: A new growth parameter
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 61-66
- https://doi.org/10.1016/0022-0248(90)90937-g
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology (01604001, 63604001)
This publication has 5 references indexed in Scilit:
- Photo-assisted MBE growth of ZnSe crystalsJournal of Crystal Growth, 1989
- MBE growth of high quality lattice-matched ZnSxSe1-x on GaAs substratesJournal of Crystal Growth, 1988
- cw laser induced low-temperature decomposition of CdTe crystalsApplied Physics Letters, 1984
- High-quality ZnSe thin films grown by molecular beam epitaxyApplied Physics Letters, 1983
- Partial Pressure of Se2 and Optical Density of Selenium Vapor in the Visible and UltravioletThe Journal of Chemical Physics, 1965