Effect of bulk carriers on PROM sensitivity

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Abstract
The PROM is an electro−optic image−recording device which uses bismuth silicon oxide as an active material. Because of the thickness of the crystal (150−1000 μm), carriers generated in the depth of the crystal and carriers trapped within the crystal must be considered in determining its operating parameters. This paper presents a simple model which relates crystal absorption and carrier diffusion to device sensitivity. The results show good correlation with experimental data and also give some explanation of why device resolution is better than would be expected with such a thick recording material.