Electron irradiation effects in silicon at liquid helium temperatures using AC hopping conductivity†

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Abstract
Changes in ac hopping conductivity with electron irradiation have been measured in n-type silicon, p-type silicon, and high purity silicon. Irradiations were carried out at both 4.8 and 1.6 degrees kelvin, with measurements made at reference temperatures of 4.2 and 1.3 degrees kelvin, respectively. In the p-type crystals, the changes in ac hopping conductivity depended strongly on the concentration of chemical acceptors, indicating a concentration dependence on impurities of the defect production rate. The production rates at 1.6°K were generally very similar to those for a 4.8°K irradiation. No significant thermal annealing stages below room temperature were observed in any of the crystals. A small amount of ‘reverse annealing’, i.e. an increase in ac hopping conductivity was observed below 30°K. No radiation annealing effects due to a beam of either 300 MeV or.350 MeV electrons were observed, either at 4.5°K or at 1.45°K.

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