Experimental results on the specific contact resistivity of Al/polysilicon are given for Al/1.5-percent Si contacting poly Si implanted with boron or phosphorus, annealed to surface concentrations from 3E18 to 4E20 cm-3. Specific contact resistivities of the interfaces involved were determined using an extrapolation method. Measurements were taken at room temperature, and were conducted both before and after an anneal cycle of 20 min at 450°C in forming gas. Results provide a useful parameter which enables modeling of Al/poly Si contacts.