Phase-coupled two-dimensional AlxGa1−xAs-GaAs vertical-cavity surface-emitting laser array
- 21 May 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (21) , 2089-2091
- https://doi.org/10.1063/1.102981
Abstract
Data are presented demonstrating the optically coupled operation of a 3×3 two-dimensional array of AlxGa1−xAs-GaAs vertical-cavity surface-emitting lasers. Room-temperature threshold current for the array is 90 mA, with the device geometry allowing for light emission from the epitaxial side of the device.Keywords
This publication has 8 references indexed in Scilit:
- Low-threshold electrically pumped vertical-cavity surface-emitting microlasersElectronics Letters, 1989
- Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laserApplied Physics Letters, 1989
- High-power vertical-cavity surface-emitting AlGaAs/GaAs diode lasersApplied Physics Letters, 1989
- Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) under Room Temperature CW ConditionsJapanese Journal of Applied Physics, 1989
- GaAs surface emitting lasers with circular buried heterostructure grown by metalorganic chemical vapor deposition and two-dimensional laser arrayApplied Physics Letters, 1988
- Optical beam characteristics of Schottky barrier confined arrays of phase-coupled multiquantum well GaAs lasersIEEE Journal of Quantum Electronics, 1984
- GaInAsP/InP Surface Emitting Injection LasersJapanese Journal of Applied Physics, 1979
- Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eVJournal of Applied Physics, 1975