Proposal for Semiconductor Laser with Wide‐Gap Emitters
- 1 January 1964
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 6 (3) , 651-664
- https://doi.org/10.1002/pssb.19640060306
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GaAsApplied Physics Letters, 1963
- Proposal for reduction of diffraction losses in P-N lasersPhysica, 1963
- Threshold Relations and Diffraction Loss for Injection LasersIBM Journal of Research and Development, 1963
- RECOMBINATION RADIATION IN GaAs BY OPTICAL AND ELECTRICAL INJECTIONApplied Physics Letters, 1962
- STIMULATED EMISSION OF RADIATION FROM GaAs p-n JUNCTIONSApplied Physics Letters, 1962
- Optical Absorption Edge in GaAs and Its Dependence on Electric FieldJournal of Applied Physics, 1961
- The Optical Absorption Edge of Gallium ArsenideProceedings of the Physical Society, 1961
- Resonant Modes in a Maser InterferometerBell System Technical Journal, 1961
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960
- Thermal, electrical and optical properties of (In,Ga)as alloysJournal of Physics and Chemistry of Solids, 1959