Lattice Mismatch Effects in Gaas Epitaxy on Si and GaP
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Initial stages of epitaxial growth of GaAs on (100) siliconJournal of Applied Physics, 1987
- Atomic structure of the GaAs/Si interfaceApplied Physics Letters, 1986
- Study of heteroepitaxial interfaces by atomic resolution electron microscopyJournal of Vacuum Science & Technology B, 1986
- The dissociation of dislocations in GaAsPhilosophical Magazine A, 1978