CMOS compatible, self-biased bipolar transistor aimed at detecting maximum temperature in a silicon integrated circuit

4 August 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (16) , 1022-1024
https://doi.org/10.1049/el:19880696

Abstract

A new bipolar device, fully CMOS compatible, that properly detects and amplifies the leakage current of a reverse-biased bulk junction is presented. The amplification factor is the current gain h_FE of the bipolar transistor which is maximised and independent of all spurious and less reproducible surface and space-charge recombination mechanisms.

Keywords

AMPLIFICATION FACTOR
SPACE-CHARGE RECOMBINATION MECHANISMS
REVERSE-BIASED BULK JUNCTION
MAXIMUM TEMPERATURE
LEAKAGE CURRENT
FULLY CMOS COMPATIBLE
CURRENT GAIN
SI INTEGRATED CIRCUIT
SELF-BIASED BIPOLAR TRANSISTOR

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