Reliability of mesa and planar InGaAs PIN photodiodes
- 1 January 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings J Optoelectronics
- Vol. 137 (1) , 74-78
- https://doi.org/10.1049/ip-j.1990.0015
Abstract
InGaAs planar-structure PIN photo-diodes fabricated from MOVPE material have been demonstrated to have outstanding reliability. The predicted random failure rate at 20°C is less than 0.3 FITs, and the mean time to failure is estimated to be 1011 hours at 20°C. By contrast, the reliability of mesa-structure photodiodes is unacceptable because of an instability of the dark current. A similar kind of instability has been observed in commercially available mesa photodiodes. Extensive life testing of planar-structure and mesa-structure PINs made by several manufacturers shows that the reliability of mesa-structure PINs is inferior in all cases.Keywords
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