Characteristics of a two-component chemically-assisted ion-beam etching technique for dry-etching of high-speed multiple quantum well laser mirrors
- 14 August 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (7) , 927-929
- https://doi.org/10.1063/1.114697
Abstract
We have developed a two-component chemically-assisted ion-beam etching (CAME) technique for dry-etching of high-speed multiple quantum well (MQW) laser mirrors. This two-component process relaxes several constraints in the dry-etching of AI containing opto-electronic device structures with Cl2 alone. The strained 3 x 100 My square meter In0.35 Ga0.65 As/GaAs undoped and p-doped 4-QW ridge waveguide lasers containing GaAs/AlAs binary short-period superlattice cladding layers with cavities fabricated by this CAME technique demonstrate record direct modulation bandwidths of 24 GHz(Ibias=25mA) and 33 Ghz (Ibis=65mA), respectivelyKeywords
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