Parasitic Resistance Considerations of Using Elevated Source/Drain Technology for Deep Submicron Metal Oxide Semiconductor Field Effect Transistors
- 1 June 1998
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 145 (6) , 2131-2137
- https://doi.org/10.1149/1.1838607
Abstract
No abstract availableThis publication has 0 references indexed in Scilit: