Submicron Optical Lithography With High Resolution I-Line Lens

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Abstract
This paper reports about a submicron optical lithography based on the Zeiss i-line lens 10-78-48 which has a superior resolution due to a high numerical aperture of 0.42 and reduced wavelength of exposure. The first prototype of this lens has been incorporated into a GCA DSW-6300 waferstepper and was extensively used in a CMOS process with 0.8-μm-technology. Problems of this first application of i-line lithography are the main subject of this paper emphasizing the vanishing margin of depth of focus and the interference of i-line aerial image with standard g-line resists. A characterization of the lens performance is presented as well as a summary of our experiences with low absorbing photoresists which are better adapted to i-line exposure.

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