Nernst and Ettingshausen Effects in Silicon between 300°K and 800°K

The Nernst and Ettingshausen coefficients in $p$-type silicon single crystals of various impurity densities have been measured over a temperature range between 300°K and 800°K at magnetic fields of 9000 gauss. The results are in good agreement with the theoretical predictions. Using the measured coefficients in the Bridgman relation, values were obtained for the thermal conductivity of silicon in the temperature range between 550°K and 800°K.