Erratum: Optoelectronic switch with low holding power

• 14 April 1990
• journal article
• Published by Institution of Engineering and Technology (IET) in Electronics Letters
• Vol. 26  (8) , 555
• https://doi.org/10.1049/el:19900363

Abstract

Keywords

• HOLDING POWER
• OPTICAL SENSITIVITY
• GAAS-ALGAAS
• LOW HOLDING POWER
• 100 MICRON
• OEIC
• DH N+-P-N-P+ DEVICE
• OPTICAL SWITCHING INTENSITY
• DEVICE AREA
• OPTOELECTRONIC SWITCHING DEVICE
• SEMICONDUCTORS
• 200 MICRON
• 20 NW
• DOUBLE HETEROSTRUCTURE