Effects of Additives on the Stacking Fault Annihilation in β-SiC Powder Compacts

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Abstract
Effects of the addition of B, Al, Fe, and C on the annihilation of stacking faults (S. F.) in β-SiC powder compacts were investigated. The separability of the X-ray diffraction lines, Kα1 and Kα2, was applied to the qualitative evaluation of the lattice strain to elucidate the annihilation phenomena. Dissolution of B or Al (rapid heating condition) into SiC grains enhanced the lattice strain suppressing both grain growth and S. F. annihilation. The second phases formed in Al (slow heating condition) and Fe addition to β-SiC promoted both grain growth and S. F. annihilation, while the residual free carbon in C- added β-SiC impeded the grain boundary movement and hence suppressed grain growth and S. F. annihilation.

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