High-power GaAs FET amplifier - A multigate structure

• 1 January 1973
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• Vol. XVI, 82-83
• https://doi.org/10.1109/isscc.1973.1155177

Abstract

Keywords

• GALLIUM ARSENIDE
• HIGH POWER AMPLIFIERS
• OHMIC CONTACTS
• CIRCUITS
• BONDING
• MICROWAVE FETS
• INSULATION
• ELECTRIC BREAKDOWN
• FABRICATION
• DEGRADATION