A SiC JFET amplifier for operation in high temperature and high radiation environments
- 1 January 1995
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 324 (1) , 33-38
- https://doi.org/10.1063/1.47186
Abstract
A SiC high temperature amplifier circuit has been developed using discrete SiC depletion mode transistors. The amplifier open loop gain decreases by only 4 dB over the temperature range of 298 to 573 K at 1 kHz. From radiation effects results on the discrete devices included in this paper it is expected that this amplifier could survive a severe radiation environment to a total dose of 100 Mrad and neutron fluence exceeding 101 5 n/cm2. The radiation results also suggest that the amplifier will be less susceptible to radiation at high temperatures.Keywords
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