Pressure-induced symmetry breaking in tetrahedral networks
- 15 September 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (11) , 7389-7392
- https://doi.org/10.1103/physrevb.50.7389
Abstract
Recent experiment and theoretical studies appear to show a great deal of complexity in the high-pressure behavior of tetrahedral semiconductors. We show that the structural stability of silicon and the order of its phase transitions is identical to that of a tetrahedrally coordinated network of rigid rods with spring-loaded joints. We further show how this parameter-free model resolves the recent controversy regarding the first high-pressure phase in silicon.This publication has 19 references indexed in Scilit:
- Theoretical study of high-pressure orthorhombic siliconPhysical Review B, 1993
- New high-pressure phase of SiPhysical Review B, 1993
- Phase transitions in InSb at pressures up to 5 GPaPhysical Review B, 1993
- Structural phase transitions in InSb to 66 GPaPhysical Review B, 1989
- Transition from-tin to simple hexagonal silicon under pressurePhysical Review B, 1984
- Phases of silicon at high pressureSolid State Communications, 1984
- Structural phase transitions in Si and Ge under pressures up to 50 GPaPhysics Letters A, 1984
- Valence-Electron Density in Silicon under High PressurePhysical Review Letters, 1983
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution CoefficientsPhysical Review B, 1973
- Covalent-Ionic and Covalent-Metallic Transitions of Tetrahedrally CoordinatedCrystals Under PressurePhysical Review Letters, 1971