Influence of growth conditions in the case of molecular-beam epitaxy on photoluminescence spectra of GaAs/InAs/GaAs heterostructures with quantum dots near their initiation threshold

This publication has 5 references indexed in Scilit:

• Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAs
  Applied Physics Letters, 1995
• Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs
  Applied Physics Letters, 1995
• Critical layer thickness for self-assembled InAs islands on GaAs
  Physical Review B, 1994
• Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces
  Applied Physics Letters, 1994
• Self-organized growth of regular nanometer-scale InAs dots on GaAs
  Applied Physics Letters, 1994