Channeling in Diamond-Type and Zinc-Blende Lattices: Comparative Effects in Channeling of Protons and Deuterons in Ge, GaAs, and Si

The energy losses of ions channeled through GaAs, Ge, and Si were compared. The average number of electrons per atom participating in the stopping of channeled particles is about the same for elemental Ge and partially ionic GaAs. The number of electrons per atom participating in the stopping of channeled hydrogen ions is less for Si than for Ge or GaAs. Axial and planar channeling are discussed. The energy losses of axial channeling appear to be characterized by the energy losses of the plane having the largest interplanar spacing in the axial intersection. A much larger fraction of the incident beam undergoes channeling when the beam is incident along an axial intersection than when the beam is along a plane of the intersection. Comparison of energy losses of ${\mathrm{H}}^{+}$ and ${\mathrm{D}}^{+}$ shows that the mass dependencies of the minimum energy losses in channeling can be correlated simply with a velocity-dependent function. Velocity is, therefore, the important parameter in the slowing down of channeled ions within a given host lattice. The analyses of the data give evidence that an equation of the same form as the Bethe equation accounts for the minimum energy losses of channeled particles.