Electron transport through the MOCVD grown GaAs/AlGaAs/GaAs heterojunction barrier

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Abstract
We investigated the current/voltage characteristics of n+GaAs/undoped AlxGa1−xAs (200 A)/n+GaAs heterostructures grown by the metalorganic chemical vapour deposition (MOCVD) method between 77 K and 300 K. Both the voltage dependence and the temperature dependence of the current were in good agreement over a wide current range with the calculated results of the tunnelling and thermionic emission current.